• DocumentCode
    2584665
  • Title

    Digital predistorted inverse class-F GaN PA with novel PAPR reduction technique

  • Author

    Wang, Jingqi ; Xu, Yingjie ; Zhu, Xiaowei

  • Author_Institution
    State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, a digital predistorted inverse class-F GaN power amplifier with novel PAPR reduction technique, in which not only peaks but also valleys of signal are clipped to reduce the PAPR as much as possible, is presented. The inverse class-F PA is implemented by using Cree´s CGH40010 GaN HEMT with a 10W output power. Measurement results show that ACPR of the proposed PA decreases from -35.4dBc to -51.9dBc for a wideband OFDM signal with 20MHz bandwidth and 8dB PAPR after PAPR reduction. Drain efficiency of the PA is 31.3% at an average output power of 33.6dBm.
  • Keywords
    OFDM modulation; gallium compounds; high electron mobility transistors; power amplifiers; Cree CGH40010 HEMT; GaN; PAPR reduction technique; bandwidth 20 MHz; digital predistorted inverse class-F power amplifier; efficiency 31.1 percent; orthogonal frequency-division multiplexing; peak-to-average power ratio; power 10 W; wideband OFDM signal; Gallium nitride; Linearity; Peak to average power ratio; Power generation; Predistortion; GaN; OFDM; digital predistortion; inverse class-F; peak-to-average power ratio; power amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972781
  • Filename
    5972781