• DocumentCode
    2584733
  • Title

    GaAs X-band high efficiency (>65%) Broadband (>30%) amplifier MMIC based on the Class B to Class J continuum

  • Author

    Powell, J.R. ; Uren, M.J. ; Martin, T. ; McLachlan, A. ; Tasker, P. ; Woodington, S. ; Bell, J. ; Saini, R. ; Benedikt, J. ; Cripps, S.C.

  • Author_Institution
    QinetiQ, Malvern, UK
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper demonstrates, for the first time, that the Class B to Class J concept can be successfully extended to X-band operation. X band power amplifiers with >;30% bandwidth are required for a wide range of emerging applications where achieving optimal electrical efficiency is a key system driver. High efficiency is ordinarily achieved using circuit elements resonant at harmonic frequencies that are inherently narrowband in operation. The Class B to Class J continuum of modes, exploited here, offers Class B levels of efficiency over a continuum of impedance matching conditions, making wider bandwidth designs more feasible. This paper presents measurements of devices and MMIC designs which were undertaken to systematically use the continuum of modes for the first time at X-band. The 0.5W MMIC fabricated using a GaAs pHEMT process yields above 65% drain efficiency over >;30% bandwidth.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium arsenide; high electron mobility transistors; impedance matching; integrated circuit design; wideband amplifiers; GaAs; X band power amplifier; X-band high efficiency broadband amplifier MMIC; circuit element resonant; class B continuum; class J continuum; device measurement; harmonic frequency; impedance matching condition; key system driver; optimal electrical efficiency; pHEMT process; power 0.5 W; wider bandwidth design; Bandwidth; Gallium arsenide; Gallium nitride; Harmonic analysis; Impedance; MMICs; Power amplifiers; MIMICS; Power amplifiers; phased arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972786
  • Filename
    5972786