New plasma shaping technology for optimal high voltage diode performance

Author

Kopta, A. ; Rahimo, M. ; Schlapbach, U.

Author_Institution

ABB Switzerland Ltd., Lenzburg

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

10

Abstract

In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He++ irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode.

Keywords

insulated gate bipolar transistors; power semiconductor diodes; double local lifetime-control method; high voltage diode; next generation high power IGBT modules; onstate electron-hole distribution; plasma shaping technology; soft recovery characteristics; Anodes; Cathodes; Insulated gate bipolar transistors; Inverters; Performance loss; Plasma materials processing; Plasma properties; Rectifiers; Semiconductor diodes; Voltage control; Design; Device Characterization; Free wheel diode (FWD); Reverse recovery; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417612

Filename

4417612