Title :
New plasma shaping technology for optimal high voltage diode performance
Author :
Kopta, A. ; Rahimo, M. ; Schlapbach, U.
Author_Institution :
ABB Switzerland Ltd., Lenzburg
Abstract :
In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He++ irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode.
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; double local lifetime-control method; high voltage diode; next generation high power IGBT modules; onstate electron-hole distribution; plasma shaping technology; soft recovery characteristics; Anodes; Cathodes; Insulated gate bipolar transistors; Inverters; Performance loss; Plasma materials processing; Plasma properties; Rectifiers; Semiconductor diodes; Voltage control; Design; Device Characterization; Free wheel diode (FWD); Reverse recovery; Robustness;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417612
