Salicides for 0.10 /spl mu/m gate lengths: a comparative study of one-step RTP Ti with Mo doping, Ti with pre-amorphization and Co process

Author

Kittl, J.A. ; Qi-Zhong Hong ; Chih-Ping Chao ; Ih-Chin Chen ; Ning Yu ; O´Brien, S. ; Hanratty, M.

Author_Institution

Semiconductor Process and Device Center, Texas Instruments Incorporated, P.O. Box 655012, MS 944, Dallas. TX 75265

fYear

1997

fDate

10-12 June 1997

Firstpage

103

Lastpage

104

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623716

Filename

623716

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