Title :
Salicides for 0.10 /spl mu/m gate lengths: a comparative study of one-step RTP Ti with Mo doping, Ti with pre-amorphization and Co process
Author :
Kittl, J.A. ; Qi-Zhong Hong ; Chih-Ping Chao ; Ih-Chin Chen ; Ning Yu ; O´Brien, S. ; Hanratty, M.
Author_Institution :
Semiconductor Process and Device Center, Texas Instruments Incorporated, P.O. Box 655012, MS 944, Dallas. TX 75265
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623716
