Modeling a SCR-based protection structure for RF-ESD co-design simulations

Author

Romanescu, Alexandru ; Ferrari, Philippe ; Arnould, Jean-Daniel ; Fonteneau, Pascal ; Legrand, Charles-Alexandre

Author_Institution

LAHC, Univ. of Savoy, Grenoble, France

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

Electrostatic discharge protection is a must in every integrated circuit. At microwave frequencies, the influence the protection devices have over the circuit they protect can significantly impact the functioning of the latter. A model for the SCR (silicon controlled rectifier - one of the most efficient ESD protection devices) and the ESD protection diode was developed. Its purpose is to estimate this influence at frequencies up to 65 GHz. A complex device, the DTSCR (diode triggered SCR) is used to demonstrate the consistency of the SCR and diode models.

Keywords

electrostatic discharge; high-frequency discharges; thyristors; DTSCR-based protection structure; Electrostatic discharge protection; RF-ESD codesign simulation; integrated circuit; microwave frequencies; silicon controlled rectifier; Capacitance; Electrostatic discharge; Integrated circuit modeling; Metals; Phase measurement; Scattering parameters; Thyristors; Electrostatic discharges; microwave measurements; modeling; overvoltage protection; simulation; thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972792

Filename

5972792