• DocumentCode
    2584892
  • Title

    Millimeter wave field effect transistors produced using high purity semiconducting single-walled carbon nanotubes

  • Author

    Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, G.

  • Author_Institution
    Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve-d´´Ascq, France
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
  • Keywords
    carbon nanotubes; millimetre wave field effect transistors; FET; carbon nanotube field effect transistors; high frequency electronics; high purity semiconducting single-walled carbon nanotubes; millimeter wave field effect transistors; CNTFETs; Carbon nanotubes; Cutoff frequency; Electron tubes; Logic gates; Carbon nanotube; high frequency; millimeter wave FET; single-walled CNTFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972794
  • Filename
    5972794