DocumentCode
2584892
Title
Millimeter wave field effect transistors produced using high purity semiconducting single-walled carbon nanotubes
Author
Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, G.
Author_Institution
Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve-d´´Ascq, France
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
4
Abstract
We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
Keywords
carbon nanotubes; millimetre wave field effect transistors; FET; carbon nanotube field effect transistors; high frequency electronics; high purity semiconducting single-walled carbon nanotubes; millimeter wave field effect transistors; CNTFETs; Carbon nanotubes; Cutoff frequency; Electron tubes; Logic gates; Carbon nanotube; high frequency; millimeter wave FET; single-walled CNTFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5972794
Filename
5972794
Link To Document