Comparative study of HEMTs for LNAs in Square Kilometre Array telescope

Author

Bhaumik, Saswata ; Roy, Mousumi ; George, Danielle

Author_Institution

MACS Res. Group, Univ. of Manchester, Manchester, UK

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

The paper focuses on a comparative study of transistors of different dimensions from nine prominent low noise HEMT processes around the world. The transistors include a combination of pHEMTs and mHEMTs based on GaAs and InP substrates with gate lengths ranging from 150nm to 70nm. The Square Kilometre Array telescope will require more than 30 million low noise amplifiers (LNA). Importance of power consumption and variation of ambient temperature of the amplifiers over time and also location are being recognised as two of the primary issues. Here a detailed comparative study of noise and gain indices of HEMTs of nine processes is presented with respect to power consumption. The variation of gain and minimum noise figure with respect to temperature from -50°C to 60°C is also analysed.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; radiotelescopes; wide band gap semiconductors; GaN; InP; LNA; gate length; low noise HEMT process; low noise amplifier; power consumption; size 150 nm to 70 nm; square kilometre array telescope; temperature -50 degC to 60 degC; HEMTs; MODFETs; Microwave amplifiers; Microwave circuits; Microwave radiometry; Noise; Temperature measurement; GaAs; InP; LNA; SKA; mHEMT; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972802

Filename

5972802