• DocumentCode
    2585098
  • Title

    Behavioral model analysis using simultaneous active fundamental load-pull and harmonic source-pull measurements at X-band

  • Author

    Bell, J.J. ; Saini, R. ; Woodington, S. ; Lees, J. ; Benedikt, J. ; Cripps, S. ; Tasker, P.J.

  • Author_Institution
    Center for High Freq. Eng. Cardiff Univ., Cardiff, UK
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recently there has been a renewed interest in improving power amplifier performance via input waveform engineering. In order to support this development it is important that non-linear behavioral device models can accurately describe and fully account for the high levels of input harmonic signal injection necessary. The work presented in this paper introduces an adapted mixing model formulation, which was used to extract input second harmonic model coefficients from a set of simultaneous active fundamental load-pull and harmonic source-pull measurements at 9 GHz. It was observed that a fourth order model was sufficient to capture the response of the scattered travelling b2,1 and b2,2 waves to a confidence of 99.46% and 97.62% respectively of the measured data. Hereafter the behavioral model was used to accurately generate the full fundamental output impedance space and the respective port current and voltage waveforms within a CAD environment.
  • Keywords
    microwave measurement; microwave power amplifiers; semiconductor device models; CAD environment; active fundamental load-pull measurement; adapted mixing model formulation; behavioral model analysis; fourth order model; frequency 9 GHz; harmonic signal injection; harmonic source-pull measurements; input second harmonic model coefficient extraction; input waveform engineering; nonlinear behavioral device model; power amplifier performance; voltage waveforms; Current measurement; Harmonic analysis; Impedance; Load modeling; Power amplifiers; Solid modeling; Voltage measurement; HEMTs; MMICs; Modeling; Nonlinear systems; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972803
  • Filename
    5972803