DocumentCode :
2585109
Title :
A 60 GHz SiGe HBT Chip Set
Author :
Boeck, Georg ; Subramanian, Viswanathan ; Keusgen, Wilhelm ; Do, Van-Hoang
Author_Institution :
Microwave Eng. Lab., Berlin Univ. of Technol., Berlin
fYear :
2008
fDate :
27-28 Oct. 2008
Firstpage :
13
Lastpage :
16
Abstract :
A 60 GHz SiGe HBT chipset for high speed wireless communication systems has been developed. The functionalities of LNA, up-converter, down-converter and PA have been realized with good performance. Design strategy, achieved results and comparison with state-of-the-art work will be presented. The work proves that single chip integration of the whole 60 GHz RF-frond-end will be possible using silicon based technologies.
Keywords :
Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; low noise amplifiers; millimetre wave bipolar transistors; millimetre wave power amplifiers; radiocommunication; HBT chip set; LNA; PA circuits; RF-frond-end; SiGe; down-converter; frequency 60 GHz; high speed wireless communication system; silicon based technology; up-converter; Circuit simulation; Circuit synthesis; Distributed parameter circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Integrated circuit interconnections; Millimeter wave technology; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
Type :
conf
DOI :
10.1109/EMICC.2008.4772216
Filename :
4772216
Link To Document :
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