A 60 GHz SiGe HBT Chip Set

Author

Boeck, Georg ; Subramanian, Viswanathan ; Keusgen, Wilhelm ; Do, Van-Hoang

Author_Institution

Microwave Eng. Lab., Berlin Univ. of Technol., Berlin

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

13

Lastpage

16

Abstract

A 60 GHz SiGe HBT chipset for high speed wireless communication systems has been developed. The functionalities of LNA, up-converter, down-converter and PA have been realized with good performance. Design strategy, achieved results and comparison with state-of-the-art work will be presented. The work proves that single chip integration of the whole 60 GHz RF-frond-end will be possible using silicon based technologies.

Keywords

Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; low noise amplifiers; millimetre wave bipolar transistors; millimetre wave power amplifiers; radiocommunication; HBT chip set; LNA; PA circuits; RF-frond-end; SiGe; down-converter; frequency 60 GHz; high speed wireless communication system; silicon based technology; up-converter; Circuit simulation; Circuit synthesis; Distributed parameter circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Integrated circuit interconnections; Millimeter wave technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772216

Filename

4772216