DocumentCode :
2585158
Title :
Analysis of Bias Effects on VSWR Ruggedness in RF LDMOS for Avionics Applications
Author :
Formicone, G. ; Boueri, F. ; Burger, J. ; Cheng, W. ; Kim, Y. ; Titizian, J.
Author_Institution :
Integra Technol., Inc., El Segundo, CA
fYear :
2008
fDate :
27-28 Oct. 2008
Firstpage :
28
Lastpage :
31
Abstract :
A 210 W RF LDMOS power transistor optimized for pulsed applications has been used to characterize VSWR ruggedness as a function of bias and gain compression. The ruggedness test used is the 10:1 VSWR load mismatch. The transistor, operated in class AB power amplifier, can deliver 210 W of output power when biased at 32 V (P3dB) or 36 V (P1dB), having a minimum breakdown voltage of 85 V. In both conditions the transistor passes 4:1 VSWR mismatch without degradation. We also found that when operated at 32 V and 210 W (3dB compression) the transistor passes 10:1 VSWR load mismatch without any degradation. On the contrary, when operated at 36 V (1dB compression), the transistor either goes into catastrophic failure or it survives the mismatch test with a severe power rating degradation in excess of 5%. Measured electrical data and simulated junction temperature data help explaining the different results on the VSWR ruggedness.
Keywords :
avionics; power MOSFET; power amplifiers; semiconductor device reliability; RF LDMOS power transistor; VSWR load mismatch; VSWR ruggedness; avionics application; bias compression; bias effect analysis; breakdown voltage; catastrophic failure; class AB power amplifier; gain compression; measured electrical data; power 210 W; power rating degradation; simulated junction temperature data; voltage 32 V; voltage 36 V; voltage 85 V; Aerospace electronics; Degradation; Power amplifiers; Power generation; Power transistors; Pulse amplifiers; Pulse compression methods; Radio frequency; Radiofrequency amplifiers; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
Type :
conf
DOI :
10.1109/EMICC.2008.4772220
Filename :
4772220
Link To Document :
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