Title :
Gate Electrode Engineering By Control Of Grain Growth For High Performance And High Reliable 0.18/spl mu/m Dual Gate CMOS
Author :
Shimizu, S. ; Kuroi, T. ; Sayama, H. ; Furukawa, A. ; Nishida, Y. ; Inoue, Y. ; Inuishi, M. ; Nishimura, T.
Author_Institution :
Advanced Technology R&D Center, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664, JAPAN
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623718
