Miniaturized Multilayer CPW pHEMT Amplifiers

Author

Sun, Q. ; Vo, V.T. ; Davies, R.A. ; Tan, TY ; Rezazadeh, A.A.

Author_Institution

Electromagn. Res. Centre, Univ. of Manchester, Manchester

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

44

Lastpage

47

Abstract

Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components. The results show that multilayer technology reduces the size of the amplifiers by approximately 50% while maintaining the same performance. In this paper we demonstrate that the developed compact components are integrated with pre-fabricated GaAs pHEMTs to form 3D MMICs providing excellent performance and space saving resulting in low cost manufacturing of future MMICs.

Keywords

III-V semiconductors; MMIC; coplanar waveguides; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; 3D MMIC; CPW pHEMT amplifiers; GaAs; compact components; miniaturized amplifiers; multilayer technology; Capacitors; Coplanar waveguides; Costs; Gallium arsenide; Inductors; MMICs; Nonhomogeneous media; PHEMTs; Performance evaluation; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772224

Filename

4772224