Title :
Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations
Author :
Abele, Peter ; Schäfer, Michael ; Splettstosser, J. ; Thinnes, Martin ; Stieglauer, Hermann ; Behammer, Dag
Author_Institution :
United Monolithic Semicond. GmbH, Ulm
Abstract :
In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.
Keywords :
III-V semiconductors; etching; gallium arsenide; high electron mobility transistors; semiconductor process modelling; GaAs; device simulations; electrical DC parameters; process stabilization; recess etching; sensitivity analyses; single recess pHEMT process; Analytical models; Doping; Equations; Etching; Gallium arsenide; Leakage current; PHEMTs; Schottky barriers; Sensitivity analysis; Solid modeling;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772227
