• DocumentCode
    2585298
  • Title

    60 GHz Frequency Conversion 90 nm CMOS Circuits

  • Author

    Kantanen, Mikko ; Holmberg, Jan ; Karttaavi, Timo ; Volotinen, Juha

  • Author_Institution
    VTT Tech. Res. Centre of Finland, Espoo
  • fYear
    2008
  • fDate
    27-28 Oct. 2008
  • Firstpage
    60
  • Lastpage
    63
  • Abstract
    This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.
  • Keywords
    CMOS integrated circuits; MMIC mixers; frequency multipliers; integrated circuit design; millimetre wave mixers; CMOS circuits; MMIC; differential buffer stage; frequency 30 GHz to 60 GHz; frequency conversion; frequency doubler; resistive down conversion mixer; size 90 nm; CMOS technology; Distributed parameter circuits; Fingers; Frequency conversion; Impedance matching; Loss measurement; Millimeter wave transistors; Power measurement; Power transmission lines; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
  • Conference_Location
    Amsterdam
  • Print_ISBN
    978-2-87487-007-1
  • Type

    conf

  • DOI
    10.1109/EMICC.2008.4772228
  • Filename
    4772228