DocumentCode
2585298
Title
60 GHz Frequency Conversion 90 nm CMOS Circuits
Author
Kantanen, Mikko ; Holmberg, Jan ; Karttaavi, Timo ; Volotinen, Juha
Author_Institution
VTT Tech. Res. Centre of Finland, Espoo
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
60
Lastpage
63
Abstract
This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.
Keywords
CMOS integrated circuits; MMIC mixers; frequency multipliers; integrated circuit design; millimetre wave mixers; CMOS circuits; MMIC; differential buffer stage; frequency 30 GHz to 60 GHz; frequency conversion; frequency doubler; resistive down conversion mixer; size 90 nm; CMOS technology; Distributed parameter circuits; Fingers; Frequency conversion; Impedance matching; Loss measurement; Millimeter wave transistors; Power measurement; Power transmission lines; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772228
Filename
4772228
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