Title :
S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power
Author :
van Heijningen, M. ; Visser, G.C. ; van Vliet, F.E. ; Würfl, J.
Author_Institution :
TNO Defense, Security & Safety, The Hague
Abstract :
This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; coplanar waveguides; gallium compounds; integrated circuit design; millimetre wave power amplifiers; wide band gap semiconductors; AlGaN-GaN; CPW technology; MMIC; S-band power amplifier; design; drain-gate voltage; frequency 2.5 GHz to 3.7 GHz; power added efficiency; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; Isolation technology; MMICs; Power amplifiers; Power generation; Radar applications; Robustness; Switches;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772233
