Title :
Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters
Author :
Stalter, O. ; Burger, B. ; Lehrmann, S.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst., Freiburg
Abstract :
The new MOSFET-generation with SiC-materials seems well suited for power electronics converters up to 1200 V operating-voltage, and particularly for grid-feeding solar-inverters. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V SiC DMOSFET samples.
Keywords :
insulated gate bipolar transistors; invertors; power MOSFET; silicon compounds; solar energy conversion; wide band gap semiconductors; IGBT DMOSFET; SiC; grid-feeding solar-inverters; power electronics converters; voltage 1200 V; Costs; Current measurement; FETs; Insulated gate bipolar transistors; Power electronics; Semiconductor materials; Silicon carbide; Switching frequency; Thermal resistance; Voltage; Converter circuit; Efficiency; High frequency power converter; Power semiconductor device; SiC-device;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417654
