Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters

Author

Stalter, O. ; Burger, B. ; Lehrmann, S.

Author_Institution

Fraunhofer Inst. for Solar Energy Syst., Freiburg

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

10

Abstract

The new MOSFET-generation with SiC-materials seems well suited for power electronics converters up to 1200 V operating-voltage, and particularly for grid-feeding solar-inverters. Their high switching speed and low on-resistance R_DS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V SiC DMOSFET samples.

Keywords

insulated gate bipolar transistors; invertors; power MOSFET; silicon compounds; solar energy conversion; wide band gap semiconductors; IGBT DMOSFET; SiC; grid-feeding solar-inverters; power electronics converters; voltage 1200 V; Costs; Current measurement; FETs; Insulated gate bipolar transistors; Power electronics; Semiconductor materials; Silicon carbide; Switching frequency; Thermal resistance; Voltage; Converter circuit; Efficiency; High frequency power converter; Power semiconductor device; SiC-device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417654

Filename

4417654