AlGaN/GaN HEMT with over 110 W Output Power for X-Band

AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8 GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52 mm single chip AlGaN/GaN HEMT exhibited 36.5 W CW output power with a power added efficiency (PAE) of 40.1% and power density of 6.6 W/mm at 35 V drain bias voltage (Vds). The device with four chips combining demonstrated a CW over 100 W across the band of 7.7-8.2 GHz, and an maximum CW output power of 119.1 W with PAE of 38.2% at Vds =31.5 V. This is the highest output power for AlGaN/GaN HEMT operated at X-band to the best of our knowledge.