Title :
Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications
Author :
Kühn, J. ; van Raay, F. ; Quay, R. ; Kiefer, R. ; Bronner, W. ; Seelmann-Eggebert, M. ; Schlechtweg, M. ; Mikulla, M. ; Ambacher, O. ; Thumm, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg
Abstract :
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band frequencies in microstrip line technology on thinned s.i. SiC substrates. The design features a modular circuit concept and microstrip MMIC directional couplers with low impedance levels. These 3 dB-couplers designed for a center frequency of 10 GHz show a coupling factor of 3.5 dB plusmn 0.4 dB and a low net insertion loss of 0.3 dB. The balanced amplifier reaches 11 W pulsed output power at 3 dB compression level and a maximum gain of 10 dB at 8.56 GHz with an input and output match of better than 14 dB from 8.3 to 13 GHz. This 0deg/90deg balanced microstrip AlGaN/GaN HEMT power amplifier MMIC demonstrator may be an interesting alternative to existing hybrid solutions.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave directional couplers; wide band gap semiconductors; AlGaN-GaN; HEMT; MMIC; MMIC demonstrator; SiC; balanced microstrip power amplifier; directional couplers; frequency 8.3 GHz to 13 GHz; low impedance levels; microstrip line technology; modular circuit; Aluminum gallium nitride; Circuits; Frequency; Gallium nitride; HEMTs; MMICs; Microstrip; Power amplifiers; Pulse amplifiers; Silicon carbide;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772237
