DocumentCode :
2585530
Title :
R-2 The Interconnect Crisis
Author :
Hayashi, Yasuhiro ; Kishii ; Keyser ; Farrell, Jay A.
Author_Institution :
NEC
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
109
Lastpage :
109
Abstract :
Summary form only given. Can VLSI sustain the traditional rate of improvement in price and performance without integrating copper and low-K dielectrics into manufacturable processes? Which products will be the first to adopt these new materials? Will major insertion of these materials occur in the 0.25 um, 0.18 um, or subsequent generations? Several methods for copper line formation and many low-K dielectric constant materials are under study - which are examined in this session.
Keywords :
Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623720
Filename :
623720
Link To Document :
بازگشت