Title :
Fast physical models for Si LDMOS power transistor characterization
Author :
Everett, John P. ; Kearney, Michael J. ; Rueda, Hernan A. ; Johnson, Eric M. ; Aaen, Peter H. ; Wood, John ; Snowden, Christopher M.
Author_Institution :
Fac. of Eng. & Phys. Sci, Univ. of Surrey, Guildford, UK
Abstract :
A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S21, and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC IDS-VDS characteristic and less than 5 ms to produce S-parameters at a single frequency.
Keywords :
MIS devices; S-parameters; avalanche breakdown; elemental semiconductors; power MOSFET; silicon; 5-parameters; DC characteristics; LDMOS power transistor characterization; Q2D model; Si; avalanche breakdown; current-driven form; fast physical models; gate conduction; large-signal gate; microwave lateral diffused MOS power transistors; one-dimensional energy transport equations; process-oriented nonlinear model; quasi-two-dimensional model; thermal effects; two-dimensional cross-section; Integrated circuit modeling; Logic gates; Mathematical model; Microwave FETs; Solid modeling; Field Effect transistor (FET); laterally diffused MOS (LDMOS); quasi-two-dimensional (Q2D); transistor model;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972839
