Title :
Metamorphic MMICs for Operation Beyond 200 GHz
Author :
Tessmann, A. ; Kallfass, I. ; Leuther, A. ; Massler, H. ; Schlechtweg, M. ; Ambacher, O.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
Abstract :
In this paper, we present the development of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Furthermore, a G-band low-noise amplifier MMIC demonstrating a linear gain of more than 16 dB between 180 and 220 GHz and a state-of-the-art noise figure of 4.8 dB was fabricated using a gate length of 50 nm. Finally, a submillimeter-wave monolithic integrated circuit (S-MMIC) could be realized based on an advanced 35 nm mHEMT technology, offering a small-signal gain of more than 15 dB between 270 and 310 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; millimetre wave mixers; submillimetre wave amplifiers; submillimetre wave integrated circuits; submillimetre wave mixers; FET mixer; G-band low-noise amplifier MMIC; GCPW; InAlAs-InGaAs; depletion-type metamorphic high electron mobility transistor; frequency 180 GHz to 220 GHz; frequency 270 GHz to 310 GHz; grounded coplanar circuit topology; high-resolution imaging system; mHEMT technology; metamorphic MMIC; millimeter-wave monolithic integrated circuits; noise figure 4.8 dB; size 100 nm; size 35 nm; size 50 nm; subharmonically pumped dual-gate field-effect transistor; submillimeter-wave monolithic integrated circuits; FETs; Field effect MMICs; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Monolithic integrated circuits; Submillimeter wave integrated circuits; Submillimeter wave technology; mHEMTs;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772266
