• DocumentCode
    2585962
  • Title

    Multi-Scale Modeling of Shock-Induced Failure of Polysilicon MEMS

  • Author

    Ghisi, Aldo ; Fachin, Fabio ; Mariani, Stefano ; Corigliano, Alberto ; Zerbini, Sarah

  • Author_Institution
    Dept. of Struct. Eng., Politec. di Milano, Milan
  • fYear
    2007
  • fDate
    16-18 April 2007
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We investigate the shock-induced stress state and possible failure mechanisms in polysilicon MEMS sensors. In case of accidental drop events, we aim at highlighting the links between drop features, like drop height and impact angles, and the location of the failing detail of the device. Taking into account the small inertial contribution of the sensor to the whole package dynamics, we adopt a decoupled multi-scale numerical approach, where macro-scale analyses (at die length-scale) are used to define the acceleration records to be adopted as loading in meso-scale (at sensor length-scale) simulations. We show that a commonly adopted indicator to assess drop severity is not able to take in due account the details of the impact event and possible very localized failures at the sensor level.
  • Keywords
    elemental semiconductors; failure analysis; microsensors; shock wave effects; silicon; Si; die length-scale; failure mechanisms; multi-scale modeling; package dynamics; polysilicon MEMS sensors; shock-induced stress state; Acceleration; Analytical models; Failure analysis; Geometry; Mechanical sensors; Micromechanical devices; Packaging; Shock waves; Stress; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems, 2007. EuroSime 2007. International Conference on
  • Conference_Location
    London
  • Print_ISBN
    1-4244-1105-X
  • Electronic_ISBN
    1-4244-1106-8
  • Type

    conf

  • DOI
    10.1109/ESIME.2007.360014
  • Filename
    4201181