DocumentCode
2585962
Title
Multi-Scale Modeling of Shock-Induced Failure of Polysilicon MEMS
Author
Ghisi, Aldo ; Fachin, Fabio ; Mariani, Stefano ; Corigliano, Alberto ; Zerbini, Sarah
Author_Institution
Dept. of Struct. Eng., Politec. di Milano, Milan
fYear
2007
fDate
16-18 April 2007
Firstpage
1
Lastpage
6
Abstract
We investigate the shock-induced stress state and possible failure mechanisms in polysilicon MEMS sensors. In case of accidental drop events, we aim at highlighting the links between drop features, like drop height and impact angles, and the location of the failing detail of the device. Taking into account the small inertial contribution of the sensor to the whole package dynamics, we adopt a decoupled multi-scale numerical approach, where macro-scale analyses (at die length-scale) are used to define the acceleration records to be adopted as loading in meso-scale (at sensor length-scale) simulations. We show that a commonly adopted indicator to assess drop severity is not able to take in due account the details of the impact event and possible very localized failures at the sensor level.
Keywords
elemental semiconductors; failure analysis; microsensors; shock wave effects; silicon; Si; die length-scale; failure mechanisms; multi-scale modeling; package dynamics; polysilicon MEMS sensors; shock-induced stress state; Acceleration; Analytical models; Failure analysis; Geometry; Mechanical sensors; Micromechanical devices; Packaging; Shock waves; Stress; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems, 2007. EuroSime 2007. International Conference on
Conference_Location
London
Print_ISBN
1-4244-1105-X
Electronic_ISBN
1-4244-1106-8
Type
conf
DOI
10.1109/ESIME.2007.360014
Filename
4201181
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