Title :
Industrial MHEMT Technologies for 80 - 220 GHz Applications
Author :
Smith, Derek ; Dambrine, Gilles ; Orlhac, Jean-Claude
Author_Institution :
OMMIC, Limeil-Brevannes
Abstract :
This paper describes the industrial development methodology of a family of MHEMT technologies with gate lengths from 130 down to 50 nm. State of the art MMIC LNA performance for the commercial 70 nm technology at 90 and 150 GHz is presented.
Keywords :
MMIC amplifiers; high electron mobility transistors; low noise amplifiers; millimetre wave transistors; MMIC LNA; frequency 80 GHz to 220 GHz; industrial MHEMT technologies; industrial development methodology; size 130 nm; size 50 nm; size 70 nm; Chemical technology; Electrical equipment industry; Frequency; Indium; Integrated circuit technology; MMICs; Microwave technology; Noise figure; PHEMTs; mHEMTs;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772267
