DocumentCode
2585989
Title
Industrial MHEMT Technologies for 80 - 220 GHz Applications
Author
Smith, Derek ; Dambrine, Gilles ; Orlhac, Jean-Claude
Author_Institution
OMMIC, Limeil-Brevannes
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
214
Lastpage
217
Abstract
This paper describes the industrial development methodology of a family of MHEMT technologies with gate lengths from 130 down to 50 nm. State of the art MMIC LNA performance for the commercial 70 nm technology at 90 and 150 GHz is presented.
Keywords
MMIC amplifiers; high electron mobility transistors; low noise amplifiers; millimetre wave transistors; MMIC LNA; frequency 80 GHz to 220 GHz; industrial MHEMT technologies; industrial development methodology; size 130 nm; size 50 nm; size 70 nm; Chemical technology; Electrical equipment industry; Frequency; Indium; Integrated circuit technology; MMICs; Microwave technology; Noise figure; PHEMTs; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772267
Filename
4772267
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