Modeling of Radiation, Conductor, and Dielectric Losses in SIW Components by the BI-RME Method

This paper describes the modeling of the different types of losses in substrate integrated waveguide (SIW). In particular, radiation leakage, conductor losses, and dielectric losses are considered. The modeling is based on the Boundary Integral-Resonant Mode Expansion (BI-RME) method. This method permits a fast and accurate determination of the wideband frequency response of SIW interconnects and components, by providing the admittance matrix of the circuit in the form of a pole expansion in the frequency domain. The effect of conductor and dielectric losses are included in the definition of the admittance matrix, whereas radiation leakage is accounted by defining fictitious side ports, terminated with matched loads.