GaN MMIC based T/R-Module Front-End for X-Band Applications

Author

Schuh, P. ; Sledzik, H. ; Reber, R. ; Fleckenstein, A. ; Leberer, R. ; Oppermann, M. ; Quay, R. ; van Raay, F. ; Seelmann-Eggebert, M. ; Kiefer, R. ; Mikulla, M.

Author_Institution

Defence Electron., EADS Deutschland GmbH, Ulm

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

274

Lastpage

277

Abstract

Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. The measured noise figure of the low noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multilayer LTCC technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; ceramics; field effect MMIC; gallium compounds; low noise amplifiers; microstrip circuits; receivers; transmitters; AlGaN-GaN; HEMT structures; MMIC power amplifiers; X-band; active array antennas; low noise amplifiers; multilayer low temperature co-fired ceramics; power 20 W; power 6.8 W; transmit-receive-module front-end; via-hole microstrip technology; Aluminum gallium nitride; Antenna arrays; Gallium nitride; HEMTs; High power amplifiers; Low-noise amplifiers; MMICs; Microstrip antenna arrays; Monolithic integrated circuits; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772282

Filename

4772282