Title :
A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers
Author :
Inoue, Akira ; Amasuga, Hirotaka ; Goto, Seiki ; Miyazaki, Moriyasu
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura
Abstract :
A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.
Keywords :
millimetre wave power amplifiers; power HEMT; drain-gate separation; millimeter-wave high power amplifiers; nonlinear drain resistance pHEMT model; parasitic power dissipation; resistor; Electrical resistance measurement; Frequency; High power amplifiers; Millimeter wave measurements; PHEMTs; Power amplifiers; Power dissipation; Power generation; Resistors; Voltage;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772284
