Widebandgap Semiconductor HFET Models for Microwave CAD

Physics-based device models integrated into harmonic-balance microwave CAD simulators add flexibility and the ability to investigate both device and circuit design parameters before fabrication and prototyping. Accurate formulation of these models requires that relevant physical phenomena affecting the performance of these devices be identified and suitable models developed. In this work it is shown that inclusion of space-charge induced source resistance, RF channel breakdown, and gate tunnel leakage and surface conduction in AlGaN/GaN HFETs produce a simulator that produces excellent agreement between simulated and measured data for amplifiers fabricated with these devices. This type of simulator is very useful for advanced optimization investigations.