Title :
A Non-Quasi-Static SOI MOSFET Model
Author :
Burke, Darren R. ; Brazil, Thomas J.
Author_Institution :
Sch. of Electr., Electron. & Mech. Eng., Univ. Coll. Dublin, Dublin
Abstract :
The static and large-signal behaviour of a new model for a submicron partially-depleted (PD) body-tied (BT) silicon-on-insulator (SOI) MOSFET was recently shown to give excellent agreement with measurements. Here, we complete the model validation with a detailed study of its small-signal capabilities up to a frequency of 50 GHz. Additionally, a new direct procedure is described enabling the extraction of a full parasitic network without the need for any on-wafer de-embedding structures.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; MOSFET; SOI; Si; full parasitic network extraction; silicon-on-insulator; small-signal capabilities; Capacitance; Educational institutions; Frequency; Integrated circuit modeling; MOSFET circuits; Mechanical engineering; Microwave integrated circuits; Predictive models; Silicon on insulator technology; Tunneling;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772286
