Mechanical Characterization of III-V Nanowire Using Molecular Dynamics Simulation

Author

Dawotola, Alex W. ; Yuan, C.A. ; van Driel, W.D. ; Bakkers, E. P A M ; Zhang, G.Q.

Author_Institution

Dept. of Precision & Microsyst. Eng., Delft Univ. of Technol., Delft

fYear

2007

fDate

16-18 April 2007

Firstpage

1

Lastpage

5

Abstract

Mechanical stiffness and density of III-V (GaAs) nanowire (NW) are studied by atomistic simulation in the <111>, <110> and <100> directions. Series of molecular models are established and mechanical characteristics of the crystal orientations are considered. The simulation results indicate that the NW exhibits highest structural stiffness in the <111> direction. We also found that GaAs NW exhibits mechanical linearity under 2 GPa stress. Moreover, a qualitative comparison of simulation and other calculated results is carried out, and a good agreement is established.

Keywords

III-V semiconductors; crystal orientation; density; elasticity; gallium arsenide; molecular dynamics method; nanowires; semiconductor quantum wires; <100> direction; <110> direction; <111> direction; GaAs; III-V nanowire; atomistic simulation; crystal orientation; density; mechanical characterization; mechanical linearity; mechanical stiffness; molecular dynamics simulation; pressure 2 GPa; structural stiffness; Atomic force microscopy; Computational modeling; Energy states; Equations; Gallium arsenide; III-V semiconductor materials; Potential energy; Scanning electron microscopy; Semiconductor materials; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems, 2007. EuroSime 2007. International Conference on

Conference_Location

London

Print_ISBN

1-4244-1105-X

Electronic_ISBN

1-4244-1106-8

Type

conf

DOI

10.1109/ESIME.2007.360037

Filename

4201204