DocumentCode
2586428
Title
Full W-Band High-Gain LNA in mHEMT MMIC Technology
Author
Ciccognani, Walter ; Giannini, Franco ; Limiti, Ernesto ; Longhi, Patrick E.
Author_Institution
Electron. Eng. Dept., Univ. of Rome Tor Vergata, Rome
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
314
Lastpage
317
Abstract
In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip´s power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; low noise amplifiers; GaAs; frequency 70 GHz to 105 GHz; full W-band high-gain LNA; gain 25 dB; low noise amplifier; mHEMT MMIC technology; noise figure 2.7 dB; power 35 mW; size 70 nm; Availability; Frequency; Indium phosphide; MMICs; Military communication; Millimeter wave technology; Radiofrequency integrated circuits; Satellite broadcasting; Space technology; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772292
Filename
4772292
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