An Electrothermal Model of High Power HBTs for High Efficiency L/S Band Amplifiers

Author

Xiong, A. ; Sommet, R. ; Jardel, O. ; Gasseling, T. ; De Souza, A. A Lisboa ; Quéré, R. ; Rochette, S.

Author_Institution

XLIM, Univ. of Limoges, Limoges

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

318

Lastpage

321

Abstract

This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HBT) intended for CAD. The first section describes the model topology and sets the implemented equations that allow to take into account of the physical phenomena. The model also integrates scaling rules function of emitter length (W) and number of fingers (N). For the thermal aspect, low frequency impedance measurement approach has been led. Model simulations have been compared to quasi-isothermal I-V measurements, pulsed S parameters measurements, and load-pull multi-harmonics measurements.

Keywords

heterojunction bipolar transistors; power amplifiers; power bipolar transistors; semiconductor device measurement; semiconductor device models; CAD; device model simulation; electrothermal model; emitter length; high efficiency L/S band amplifiers; high power HBT; load-pull multiharmonics measurement; low frequency impedance measurement approach; model topology; power heterojunction bipolar transistor; pulsed S parameter measurement; quasiisothermal I-V measurement comparison; scaling rules function; Electrothermal effects; Equations; Fingers; Frequency; Heterojunction bipolar transistors; High power amplifiers; Impedance measurement; Pulse measurements; Scattering parameters; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772293

Filename

4772293