Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects

Author

Santarelli, Alberto ; Cignani, Rafael ; Di Giacomo, Valeria ; D´Angelo, Sara ; Niessen, Daniel ; Filicori, Fabio

Author_Institution

Dipt. di Elettron. Inf. e Sist., Univ. of Bologna, Bologna, Italy

fYear

2010

fDate

26-27 April 2010

Firstpage

115

Lastpage

118

Abstract

A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; Accurate Nonlinear Modelling; AlGaN-GaN; FET devices; HEMT; charge trapping phenomena; dynamic drain current; large-signal measurement setup; low-frequency dispersive phenomena; nonlinear behaviour; sinusoidal excitation; Current measurement; Dispersion; Electron devices; Electron traps; FETs; Frequency; Gallium nitride; III-V semiconductor materials; Predictive models; Voltage control; Electron Device Model; GaN-based Device; Low-Frequency Dispersion; Measurement Setup;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on

Conference_Location

Goteborg

Print_ISBN

978-1-4244-7410-3

Electronic_ISBN

978-1-4244-7412-7

Type

conf

DOI

10.1109/INMMIC.2010.5480122

Filename

5480122