Double and triple balanced wideband mixers integrated in GaAs technology

Author

Do, M.N. ; Langrez, D. ; Villemazet, J.-F. ; Cazaux, J.L.

Author_Institution

Thales Alenia Space, Toulouse, France

fYear

2010

fDate

26-27 April 2010

Firstpage

85

Lastpage

88

Abstract

In this paper, two wideband double and triple balanced mixers integrated in GaAs technology are presented. Diodes quads in such structures are driven by low loss baluns. These baluns are designed thanks to double-inductances connected as Marchand coupler. In the mid-band, a conversion loss of 10dB has been measured for the two mixers. The double and triple balanced mixers have a LO/IF isolations of 25dB and 31.5dB respectively. Good agreement are observed between simulations and measurements.

Keywords

III-V semiconductors; baluns; gallium arsenide; mixers (circuits); waveguide couplers; wide band gap semiconductors; GaAs; LO-IF isolations; Marchand coupler; balun design; diodes quads; wideband double balanced mixers; wideband triple balanced mixers; Bandwidth; Coupling circuits; Gallium arsenide; Impedance matching; Loss measurement; Radio frequency; Schottky diodes; Signal generators; Space technology; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on

Conference_Location

Goteborg

Print_ISBN

978-1-4244-7410-3

Electronic_ISBN

978-1-4244-7412-7

Type

conf

DOI

10.1109/INMMIC.2010.5480129

Filename

5480129