Title :
Double and triple balanced wideband mixers integrated in GaAs technology
Author :
Do, M.N. ; Langrez, D. ; Villemazet, J.-F. ; Cazaux, J.L.
Author_Institution :
Thales Alenia Space, Toulouse, France
Abstract :
In this paper, two wideband double and triple balanced mixers integrated in GaAs technology are presented. Diodes quads in such structures are driven by low loss baluns. These baluns are designed thanks to double-inductances connected as Marchand coupler. In the mid-band, a conversion loss of 10dB has been measured for the two mixers. The double and triple balanced mixers have a LO/IF isolations of 25dB and 31.5dB respectively. Good agreement are observed between simulations and measurements.
Keywords :
III-V semiconductors; baluns; gallium arsenide; mixers (circuits); waveguide couplers; wide band gap semiconductors; GaAs; LO-IF isolations; Marchand coupler; balun design; diodes quads; wideband double balanced mixers; wideband triple balanced mixers; Bandwidth; Coupling circuits; Gallium arsenide; Impedance matching; Loss measurement; Radio frequency; Schottky diodes; Signal generators; Space technology; Wideband;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Conference_Location :
Goteborg
Print_ISBN :
978-1-4244-7410-3
Electronic_ISBN :
978-1-4244-7412-7
DOI :
10.1109/INMMIC.2010.5480129
