Ka-Band Wide-Bandwidth Voltage-Controlled Oscillators in InGaP-GaAs HBT Technology

Author

Chiong, Chau-Ching ; Chang, Hong-Yeh ; Chen, Ming-Tang

Author_Institution

Inst. of Astron. & Astrophys., Acad. Sinica, Taipei

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

358

Lastpage

361

Abstract

Monolithic wide-bandwidth low-phase-noise voltage-controlled oscillators (VCOs) using 2-mum InGaP-GaAs heterojunction bipolar transistor (HBT) technology are presented in the paper. The tuning range of the VCOs are 28.0 to 34.0 GHz and 33.8 to 39.1 GHz, with a phase noise of -100.7 and -103.8 dBc/Hz at 1-MHz offset from the carrier. The overall dc power consumption of the differential-output VCOs is 85 mW with a supply voltage of -2.5 V. The VCOs feature wide tuning range and low phase noise at the same time, with a figure of merit (FOM) of -176 and -171 dB. These are the first Ka-band VCOs with wide tuning bandwidth using commercial GaAs HBT process.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; voltage-controlled oscillators; InGaP-GaAs; Ka-band wide-bandwidth voltage-controlled oscillators; dc power consumption; frequency 28 GHz to 34 GHz; frequency 33.8 GHz to 39.1 GHz; heterojunction bipolar transistor; low phase noise; tuning range; wide tuning bandwidth; CMOS technology; Circuit topology; Energy consumption; Heterojunction bipolar transistors; Inductors; MOSFETs; Noise figure; Radio frequency; Telecommunication network topology; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772303

Filename

4772303