Design and Temperature Dependent Analysis of GaAs Multilayer Transmission Lines

Author

Yuan, J. ; Rezazadeh, A.A. ; Lu, J. ; Sun, Q. ; Vo, V.T.

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

378

Lastpage

381

Abstract

In multilayer technology, the generated heat can not be dissipated effectively due to its multilayer structure. In this paper we designed, fabricated and characterised a group of GaAs multilayer coplanar waveguide (CPW) transmission lines and studied the effects of temperature on these components. Furthermore a de-embedding technique has been applied and the effect of de-embedding shown to be critical in removing the pads parasitics. The temperature dependents of the transmission lines are carefully analyzed from -25degC to 125degC and the results indicated that the characteristic impedances and effective dielectric constants of the transmission lines remained constant within the temperature range. These results are reported for the first time and provide an insight into the design optimization of multilayer circuits for compact 3D MMIC applications.

Keywords

III-V semiconductors; coplanar transmission lines; coplanar waveguides; gallium arsenide; multilayers; permittivity; 3D MMIC; GaAs; characteristic impedances; coplanar waveguide transmission lines; de-embedding technique; dielectric constants; multilayer structure; temperature -25 degC to 125 degC; Coplanar transmission lines; Coplanar waveguides; Distributed parameter circuits; Gallium arsenide; Impedance; Nonhomogeneous media; Temperature dependence; Temperature distribution; Transmission lines; Waveguide components;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772308

Filename

4772308