Title :
Study on advanced power device performance under real circuit conditions with an exact power loss simulator
Author :
Takao, Kazuto ; Hayashi, Yusuke ; Harada, Shinsuke ; Ohashi, Hiromichi
Author_Institution :
Toshiba Corp., Kawasaki
Abstract :
Power losses of 700V 2.7mOmegacm2 SiC-MOSFETs including influences of circuit stray inductances have been investigated with an originally developed circuit power loss simulator. The device parameters of the SiC-MOSFETs for the power loss calculation are extracted from a SiC-IEMOSFET fabricated at AIST PERC. The power losses of three types of chip areas are investigated and compared to power loss of a CoolMOS. The switching loss energies of the SiC-MOSFETs are larger than that of the CoolMOS in the same circuit conditions. The maximum switching frequencies of the SiC-MOSFETs are 1/2 ~ 2/3 times lower than that of the CoolMOS. Based on total circuit power loss calculation results, heatsink volumes for a half bridge type DC-DC converter at 200kHz operation are estimated. In the case of the SiC- MOSFET3(smallest chip size)/SiC-SBD pair, the heatsink volume can be reduced to about 45% compared to the CoolMOS/SiC-SBD pair due to the Tj=200degC operation and the lower circuit power loss.
Keywords :
DC-DC power convertors; MOSFET; circuit simulation; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; SiC-MOSFET; advanced power device performance; circuit power loss simulator; circuit stray inductances; half bridge type DC-DC converter; heatsink volume; high power density systems; power semiconductor device; real circuit conditions; super junction devices; voltage 700 V; Circuit simulation; Electronics industry; Hybrid electric vehicles; Inverters; Matrix converters; Performance loss; Power electronics; Power generation; Power supplies; Silicon carbide; High power density systems; MOSFET; Power semiconductor device; SiC-device; Super Junction Devices;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417724