The BGK kinetic model applied to the analysis of gas-structure interactions in MEMS

Author

Frangi, Attilio ; Ghisi, Aldo

Author_Institution

Politec. di Milano, Milan

fYear

2007

fDate

16-18 April 2007

Firstpage

1

Lastpage

8

Abstract

The BGK model of the Boltzmann equation is applied to the analysis of damping in silicon inertial MEMS working at low-moderate frequencies. Assuming small perturbations, the linearised steady-state 2D equation is implemented in a deterministic manner in order to avoid noise intrinsic in statistical approaches. Implementation details are discussed and the comparison with available experimental data in terms of forces exerted on the suspended shuttle is presented.

Keywords

Boltzmann equation; damping; elemental semiconductors; micromechanical devices; rarefied fluid dynamics; silicon; BGK kinetic model; Boltzmann equation; Si; damping analysis; gas-structure interaction; linearised steady-state 2D equation; rarefied monatomic gas flow; silicon inertial MEMS; suspended shuttle; Boltzmann equation; Damping; Distribution functions; Fluid flow; Frequency; Integral equations; Kinetic theory; Micromechanical devices; Silicon; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems, 2007. EuroSime 2007. International Conference on

Conference_Location

London

Print_ISBN

1-4244-1105-X

Electronic_ISBN

1-4244-1106-8

Type

conf

DOI

10.1109/ESIME.2007.360053

Filename

4201220