DocumentCode
2586751
Title
Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers
Author
Gutta, Venkata ; Fattorini, Anthony ; Parker, Anthony E. ; Harvey, James T.
Author_Institution
Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
386
Lastpage
389
Abstract
An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.
Keywords
gallium arsenide; high electron mobility transistors; mixers (circuits); semiconductor diodes; semiconductor materials; GaAs; antiparallel diode sub-harmonic mixers; current-voltage characteristics; diode geometry; diode mismatch; high electron mobility transistor process; local oscillator breakthrough; subharmonic mixers; Circuits; Current-voltage characteristics; Diodes; Filtering; Gallium arsenide; Geometry; HEMTs; Local oscillators; MODFETs; Mixers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772310
Filename
4772310
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