Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Author

Laurent, S. ; Lisboa de Souza, Antonio Augusto ; Nallatamby, J.C. ; Prigent, M. ; Nodjiadjim, V. ; Riet, M.

Author_Institution

Xlim-Dep C2S2, Univ. de Limoges, Brive, France

fYear

2010

fDate

26-27 April 2010

Firstpage

54

Lastpage

57

Abstract

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of heterojunction bipolar transistor used in this circuit is described. The interest of the methodology used to design this oscillator, is to be able to choose a nonlinear operating condition of the transistor from a study in amplifier mode. The oscillator simulation and measurement results are compared. The measured phase noise is -85dBc/Hz at 100KHz offset from carrier.

Keywords

III-V semiconductors; MMIC oscillators; design; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; Alcatel-Thales III-V Lab; DHBT submicronic technology; InP-GaAsSb-InP; MMIC oscillator; design; fabrication; frequency 100 kHz; frequency 45 GHz; heterojunction bipolar transistor; Circuits; DH-HEMTs; Design methodology; Fabrication; Frequency; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; MMICs; Oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on

Conference_Location

Goteborg

Print_ISBN

978-1-4244-7410-3

Electronic_ISBN

978-1-4244-7412-7

Type

conf

DOI

10.1109/INMMIC.2010.5480139

Filename

5480139