A Fully Integrated 60 GHz SiGe BiCMOS Mixer

Author

Lee, Sang-Heung ; Lee, Ja-Yol ; Kim, Haecheon

Author_Institution

Electron. & Telecommun. Res. Inst. (ETRI), Daejeon

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

410

Lastpage

413

Abstract

In this paper, a 60 GHz MMIC down-conversion mixer for 60 GHz WPAN is designed and fabricated on chip using 0.25 mum SiGe:C BiCMOS process technology. This 60 GHz mixer is fully integrated on chip, including active input balun and output balun circuits. The results of the fabricated mixer measured at RF 60 GHz show conversion gain of 10.7 dB, LO to IF isolation and RF to IF isolation of above 30 dB, and input P1dB of -17 dBm. Also, the results of the fabricated mixer measured between RF 57 and 63 GHz show conversion gain of 12.0 ~ 10.7 dB, LO to IF isolation and RF to IF isolation of above 28 dB, and input P1dB of -17 ~ -18 dBm. The chip size of the manufactured mixer is 1.3 mm times 0.8 mm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; field effect MIMIC; millimetre wave mixers; personal area networks; BiCMOS process technology; MMIC down-conversion mixer; SiGe:C; WPAN; balun circuits; frequency 57 GHz to 63 GHz; fully integrated BiCMOS mixer; gain 10.7 dB; size 0.25 mum; size 0.8 mm; size 1.3 mm; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Impedance matching; Integrated circuit technology; Isolation technology; MMICs; Radio frequency; Semiconductor device measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772316

Filename

4772316