Title :
GaN RF oscillator used in space applications
Author :
Mostardinha, H. ; Cabral, P.M. ; Carvalho, N.B. ; Kurpas, P. ; Rudolph, M. ; Würfl, J. ; Pinto, J.C. ; Barnes, A. ; Garat, F.
Author_Institution :
Inst. de Telecomun., Univ. de Aveiro, Aveiro, Portugal
Abstract :
This paper reports the design and implementation of a RF GaN Oscillator for test in space. This circuit/system will be applied in a space test of the European Space Agency and it will be one of the first experiments in space using European GaN devices. The main objective will be to study the material radiation hardness. In this paper we will present the proposed circuit for test and its main design procedure.
Keywords :
circuit testing; gallium compounds; radiation hardening; radiofrequency oscillators; space vehicle electronics; wide band gap semiconductors; European GaN devices; European Space Agency; GaN; GaN RF oscillator; circuit testing; material radiation hardness; Breakdown voltage; Circuit testing; FETs; Gallium nitride; HEMTs; III-V semiconductor materials; Oscillators; Radio frequency; Silicon carbide; Space technology; Gallium Nitride; Oscillator; Resonator;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Conference_Location :
Goteborg
Print_ISBN :
978-1-4244-7410-3
Electronic_ISBN :
978-1-4244-7412-7
DOI :
10.1109/INMMIC.2010.5480142
