Title :
120-GHz-band Low-noise Amplifier with 14-ps Group-delay Variation for 10-Gbit/s Data Transmission
Author :
Takahashi, Hiroyuki ; Kosugi, Toshihiko ; Hirata, Akihiko ; Murata, Koichi ; Kukutsu, Naoya
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi
Abstract :
This paper presents a 120-GHz-band low-noise amplifier (LNA) for a receiver microwave monolithic integrated circuit (MMIC), which is used for a 10-Gbit/s wireless link. The LNA was designed for low-noise performance, a high gain, and low group-delay variation. To achieve enough stability with low-noise performance and low group-delay variation, we introduce a new stabilizing circuit consisting of two coplanar-waveguide stubs. The LNA MMIC was fabricated using 0.1-mum-gate InP high-electron-mobility transistors (HEMTs). We integrated the LNA into a WR-8 (90-140 GHz) waveguide module and evaluated it. The LNA module achieved an averaged noise figure of 5.6 dB, a gain of >19.5 dB, and group-delay variation of <14 ps from 117.5 to 132.5 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; coplanar waveguide components; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; radio links; HEMT; InP; LNA MMIC; bit rate 10 Gbit/s; coplanar-waveguide stubs; data transmission; frequency 120 GHz; group-delay variation; high-electron-mobility transistors; low-noise amplifier; microwave monolithic integrated circuit; wireless link; Circuit stability; Data communication; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; MODFETs; Monolithic integrated circuits; Noise figure; Performance gain;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772321
