Title :
Electrical characterization of wafer-scale epitaxial graphene and its RF applications
Author :
Lin, Yu-Ming ; Jenkins, Keith A. ; Ott, John ; Dimitrakopoulos, Christos ; Farmer, Damon B. ; Wu, Yanqing ; Grill, Alfred ; Avouris, Phaedon
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of >; 1mA/μm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the great potential of graphene for future RF applications.
Keywords :
annealing; epitaxial growth; field effect transistors; graphene; C; C-SiC; RF applications; electrical characterization; frequency 170 GHz; graphene FET; high current density; high-performance graphene field-effect transistors; size 90 nm; thermal annealing; wafer-scale epitaxial graphene; Current measurement; Cutoff frequency; FETs; Frequency measurement; Logic gates; Radio frequency; SiC; epitaxial graphene; field-effect transistor; radio frequency;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972909
