Large-Signal Performance of Resonant Tunnelling Diodes in K-Band Oscillators

Author

Münstermann, B. ; Matiss, A. ; Brockerhoff, W. ; Tegude, F.J.

Author_Institution

Solid-State Electron. Dept., Univ. of Duisburg-Essen, Duisburg

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

442

Lastpage

445

Abstract

The large signal behaviour of resonant tunnelling diodes (RTD) in K-band oscillators is investigated in order to optimize the RF-output power of RTD-based voltage controlled oscillators. Circuit simulations based on a scaleable large-signal RTD model are presented and different approaches to increase the RF-power are proposed. A new differential RTD-VCO-circuit in InP RTD/HBT technology with a wide tuning range is introduced, employing balanced RTD-pairs.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave oscillators; resonant tunnelling diodes; scaling circuits; voltage-controlled oscillators; InP; K-band oscillators; RF-output power optimization; RTD; RTD/HBT technology; circuit scaling; heterojunction bipolar transistors; large-signal performance; resonant tunnelling diodes; voltage controlled oscillators; Capacitors; Diodes; Epitaxial growth; K-band; Microwave integrated circuits; Microwave oscillators; Resonant tunneling devices; Semiconductor process modeling; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772324

Filename

4772324