Title :
Large-Signal Performance of Resonant Tunnelling Diodes in K-Band Oscillators
Author :
Münstermann, B. ; Matiss, A. ; Brockerhoff, W. ; Tegude, F.J.
Author_Institution :
Solid-State Electron. Dept., Univ. of Duisburg-Essen, Duisburg
Abstract :
The large signal behaviour of resonant tunnelling diodes (RTD) in K-band oscillators is investigated in order to optimize the RF-output power of RTD-based voltage controlled oscillators. Circuit simulations based on a scaleable large-signal RTD model are presented and different approaches to increase the RF-power are proposed. A new differential RTD-VCO-circuit in InP RTD/HBT technology with a wide tuning range is introduced, employing balanced RTD-pairs.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave oscillators; resonant tunnelling diodes; scaling circuits; voltage-controlled oscillators; InP; K-band oscillators; RF-output power optimization; RTD; RTD/HBT technology; circuit scaling; heterojunction bipolar transistors; large-signal performance; resonant tunnelling diodes; voltage controlled oscillators; Capacitors; Diodes; Epitaxial growth; K-band; Microwave integrated circuits; Microwave oscillators; Resonant tunneling devices; Semiconductor process modeling; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772324
