DocumentCode
258698
Title
Design and simulation of low noise amplifier for RF front end at L band
Author
Rajendran, Jolly ; Peter, Rakesh
Author_Institution
Dept. of Electron. & Commun. Eng., Amrita Vishwa Vidyapeetham, Coimbatore, India
fYear
2014
fDate
17-18 Dec. 2014
Firstpage
86
Lastpage
89
Abstract
In this paper, the design and evaluation of a low noise amplifier, that operates in the L-band, is being discussed. The amplifier was fabricated on FR-4 substrate. ATF-58143 Low Noise Enhancement Mode Pseudomorphic High Electron Mobility Transistor [HEMT] is used. The designed LNA is found to have a gain of 13 dB. The return loss is below -10 dB.
Keywords
HEMT integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; ATF-58143; FR-4 substrate; L-band; LNA; RF front end; gain 13 dB; high electron mobility transistor; low noise amplifier; low noise enhancement mode pseudomorphic HEMT; Gain; Impedance; Impedance matching; Noise; Radio frequency; Scattering parameters; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Systems and Communications (ICCSC), 2014 First International Conference on
Conference_Location
Trivandrum
Print_ISBN
978-1-4799-6012-5
Type
conf
DOI
10.1109/COMPSC.2014.7032626
Filename
7032626
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