Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

Author

Rim, K. ; Chan, K. ; Shi, L. ; Boyd, D. ; Ott, J. ; Klymko, N. ; Cardone, F. ; Tai, L. ; Koester, S. ; Cobb, M. ; Canaperi, D. ; To, B. ; Duch, E. ; Babich, I. ; Carruthers, R. ; Saunders, P. ; Walker, G. ; Zhang, Y. ; Steen, M. ; Ieong, M.

Author_Institution

Res. Div., IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.

Keywords

MOSFET; Raman spectra; annealing; buried layers; chemical mechanical polishing; electron mobility; etching; hole mobility; silicon-on-insulator; MOSFET; Raman analysis; Si; buried oxide layer; chemical mechanical polishing; electron mobility enhancements; epitaxially grown layer; fabrication; hole mobility enhancements; layer transfer technique; selective wet etch; strained directly on insulator structure; thermal anneal; ultrathin tensile-strained layer; Capacitive sensors; Charge carrier processes; Electron mobility; Fabrication; Germanium silicon alloys; Insulation; MOSFETs; Silicon germanium; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269163

Filename

1269163