Title :
Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
Author :
Rim, K. ; Chan, K. ; Shi, L. ; Boyd, D. ; Ott, J. ; Klymko, N. ; Cardone, F. ; Tai, L. ; Koester, S. ; Cobb, M. ; Canaperi, D. ; To, B. ; Duch, E. ; Babich, I. ; Carruthers, R. ; Saunders, P. ; Walker, G. ; Zhang, Y. ; Steen, M. ; Ieong, M.
Author_Institution :
Res. Div., IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.
Keywords :
MOSFET; Raman spectra; annealing; buried layers; chemical mechanical polishing; electron mobility; etching; hole mobility; silicon-on-insulator; MOSFET; Raman analysis; Si; buried oxide layer; chemical mechanical polishing; electron mobility enhancements; epitaxially grown layer; fabrication; hole mobility enhancements; layer transfer technique; selective wet etch; strained directly on insulator structure; thermal anneal; ultrathin tensile-strained layer; Capacitive sensors; Charge carrier processes; Electron mobility; Fabrication; Germanium silicon alloys; Insulation; MOSFETs; Silicon germanium; Substrates; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269163
