A very simple trench isolation (VSTI) technology with chemo-mechanically polished (CMP) substrate Si

Author

Park, T. ; Lee, H.S. ; Shin, Y.G. ; Hong, C.G. ; Kang, H.K. ; Koh, Y.B. ; Lee, M.Y.

Author_Institution

Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ree, Kiheung-Eup, Yongin-Si, Kyonggi-Do, 449-900, Korea

fYear

1997

fDate

10-12 June 1997

Firstpage

121

Lastpage

122

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623728

Filename

623728

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