DocumentCode :
2587044
Title :
Class F−1 PA: Theoretical aspects
Author :
Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
fYear :
2010
fDate :
26-27 April 2010
Firstpage :
29
Lastpage :
32
Abstract :
This contribution presents an analysis of the Class F-1 power amplifier considering different waveforms as driving signals and output current, comparing the output performance for two noteworthy cases. A MMIC Class F-1 amplifier in GaAs pHEMT technology is designed in order to validate the proposed theoretical analysis. The designed amplifier shows an output power of 28.5 dBm with a peak efficiency of 54% at 9.6 GHz.
Keywords :
MMIC power amplifiers; high electron mobility transistors; MMIC class F-1 power amplifier; driving signals; efficiency 54 percent; frequency 9.6 GHz; high electron mobility transistors; output current; pHEMT technology; waveforms; Gallium arsenide; High power amplifiers; Impedance; MMICs; PHEMTs; Performance analysis; Power amplifiers; Power engineering and energy; Power system harmonics; Voltage; Class F−1; High Efficiency; Inverse Class F; Power Amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Conference_Location :
Goteborg
Print_ISBN :
978-1-4244-7410-3
Electronic_ISBN :
978-1-4244-7412-7
Type :
conf
DOI :
10.1109/INMMIC.2010.5480148
Filename :
5480148
Link To Document :
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