DocumentCode
2587138
Title
Division by current: A new approach to FET capacitance modeling
Author
Maas, Stephen
Author_Institution
Nonlinear Technol., Inc., Long Beach, CA, USA
fYear
2010
fDate
26-27 April 2010
Firstpage
16
Lastpage
19
Abstract
This paper introduces a new approach to the modeling of capacitance in FET devices, which we call division by current. It avoids the significant disadvantages of existing formulations, which we call division by capacitance and division by charge. The new method involves the use of a single nonlinear capacitance for the gate charge, and splitting the reactive gate current between the source and drain by a pair of nonlinear functions.
Keywords
capacitance; field effect transistors; nonlinear functions; semiconductor device models; FET capacitance modeling; FET device; division-by-current; gate charge; nonlinear capacitance; nonlinear function; reactive gate current; Capacitance; Equivalent circuits; FETs; JFETs; Voltage; FET; Modeling; nonlinear capacitance;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Conference_Location
Goteborg
Print_ISBN
978-1-4244-7410-3
Electronic_ISBN
978-1-4244-7412-7
Type
conf
DOI
10.1109/INMMIC.2010.5480152
Filename
5480152
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