A high voltage high power (HiVP) class-E power amplifier at VHF

Author

Alomar, Waleed ; Mortazawi, Amir

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

A four stage cascoded class-E power amplifier based on a high voltage / high power technique (HiVP) technique has been designed and implemented. The amplifier is fabricated using four separate flanged LDMOS transistors. Drain voltage has been reduced to increase the maximum frequency of class-E operation mode and to reduce the maximum drain voltage swing to protect the transistor from breakdown. Measurement results show 69% power-added efficiency (PAE), 30.1 dB of gain and 51.8 W output power at 150 MHz.

Keywords

VHF amplifiers; power MOSFET; power amplifiers; HiVP; drain voltage; efficiency 69 percent; flanged LDMOS transistors; four stage cascoded class-E power amplifier; frequency 150 MHz; gain 30.1 dB; high voltage high power class-E power amplifier; maximum drain voltage swing; power 51.8 W; Frequency measurement; Gain; Gain measurement; Power amplifiers; Power generation; Power measurement; Transistors; Aluminum Oxide; class-E; high voltage / high power (HiVP); power amplifiers; thermal management of electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972919

Filename

5972919