Title :
A high voltage high power (HiVP) class-E power amplifier at VHF
Author :
Alomar, Waleed ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A four stage cascoded class-E power amplifier based on a high voltage / high power technique (HiVP) technique has been designed and implemented. The amplifier is fabricated using four separate flanged LDMOS transistors. Drain voltage has been reduced to increase the maximum frequency of class-E operation mode and to reduce the maximum drain voltage swing to protect the transistor from breakdown. Measurement results show 69% power-added efficiency (PAE), 30.1 dB of gain and 51.8 W output power at 150 MHz.
Keywords :
VHF amplifiers; power MOSFET; power amplifiers; HiVP; drain voltage; efficiency 69 percent; flanged LDMOS transistors; four stage cascoded class-E power amplifier; frequency 150 MHz; gain 30.1 dB; high voltage high power class-E power amplifier; maximum drain voltage swing; power 51.8 W; Frequency measurement; Gain; Gain measurement; Power amplifiers; Power generation; Power measurement; Transistors; Aluminum Oxide; class-E; high voltage / high power (HiVP); power amplifiers; thermal management of electronics;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972919
